Data underlying: Stacking domain morphology in epitaxial graphene on silicon carbide

DOI:10.4121/21930768.v1
The DOI displayed above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
DOI: 10.4121/21930768

Datacite citation style

Sense Jan van der Molen; de Jong, Tobias; Jobst, J. (Johannes) (2023): Data underlying: Stacking domain morphology in epitaxial graphene on silicon carbide. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/21930768.v1
Other citation styles (APA, Harvard, MLA, Vancouver, Chicago, IEEE) available at Datacite

Dataset

 This dataset contains stitched AC-LEEM overviews visualizing stacking domain boundaries in three different, high-quality graphene on SiC samples, grown in three different manners. The samples exhibit domain boundaries with different morphology, as explored in the corresponding paper. More details on the files can be found in the README.

History

  • 2023-03-10 first online, published, posted

Publisher

4TU.ResearchData

Format

Data as TIF-images, metadata of the stitching process in netCDF (.nc) files.

Funding

  • This work was supported by the Dutch Research Council (NWO) as part of the Frontiers of Nanoscience program

Organizations

Leiden Institute of Physics

DATA

Files (7)