The DOI displayed above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
DOI: 10.4121/30c4cc38-5844-41f2-bdef-8fa36b800ec5

Xun, Hanzhi (2025): Data underlying the publication: Device-Aware Test for Ion Depletion Defects in RRAMs. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/30c4cc38-5844-41f2-bdef-8fa36b800ec5.v1

Categories

• Electrical and Electronic Engineering
• Engineering

Keywords

3D stackability device-aware defect model linear resistors non-volatile memory non-volatile memory, 3D stackability RRAM test

Licence

CC BY-NC-ND 4.0

Export as...

RefWorks BibTeX Reference Manager Endnote DataCite NLM DC CFF

by Hanzhi Xun

The raw data of a defect-free RRAM I-V curve, which can be seen in Fig. 10 (a). The data set can help researcher to make an I-V curve or R-V curve of a HfO2 based RRAM device.

History

• 2025-03-17 first online, published, posted

Publisher

4TU.ResearchData

Format

defectfree measurements.xlsx

Associated peer-reviewed publication

Device-Aware Test for Ion Depletion Defects in RRAMs

Organizations

TU Delft, Faculty of Electrical Engineering, Mathematics and Computer Science, Department of Quantum and Computer Engineering