@misc{https://doi.org/10.4121/30c4cc38-5844-41f2-bdef-8fa36b800ec5.v1,
  doi = {10.4121/30c4cc38-5844-41f2-bdef-8fa36b800ec5.v1},
  url = {},
  author = {Xun, Hanzhi},
  keywords = {RRAM test, linear resistors, device-aware defect model, non-volatile memory, 3D stackability, non-volatile memory, 3D stackability},
  title = {Data underlying the publication: Device-Aware Test for Ion Depletion Defects in RRAMs},
  publisher = {4TU.ResearchData},
  year = {2025},
  copyright = {CC BY-NC-ND 4.0},
}