Isotropic plasma atomic layer etching of Al2O3

DOI:10.4121/13011239.v1
The DOI displayed above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
DOI: 10.4121/13011239
Datacite citation style:
Chittock, Nicholas (2020): Isotropic plasma atomic layer etching of Al2O3. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/13011239.v1
Other citation styles (APA, Harvard, MLA, Vancouver, Chicago, IEEE) available at Datacite

Dataset

Eindhoven University of Technology logo

Usage statistics

1296
views
354
downloads

Keywords

Etch Rate

Licence

CC0
Data used to plot all of the figures in the letter titled "Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3)". Each figure has its own page, original origin files are available upon request.

History

  • 2020-10-21 first online, published, posted

Publisher

4TU.ResearchData

Funding

  • NWO Project 17124 "Atomic Layer Etching: Novel Plasma Processes for Anisotropic ánd Isotropic Etching"

Organizations

Eindhoven University of Technology

DATA

Files (1)