Supporting information to derive the figures of the paper: "Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap"
DOI:10.4121/19181597.v1
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DOI: 10.4121/19181597
DOI: 10.4121/19181597
Datacite citation style:
Davide Degli Esposti (2022): Supporting information to derive the figures of the paper: "Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap". Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/19181597.v1
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Dataset
The data sets provide the necessary information to derive the figures of the paper "Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap" Preprint at https://arxiv.org/abs/2202.08090
History
- 2022-04-13 first online, published, posted
Publisher
4TU.ResearchDataFormat
jpg, tif, txt, pyReferences
Funding
- QLSI grant EU H2020 agreement No. 951852
- Army Research Office (Grant No. W911NF-17-1-0274)
- OTP with project number 16278
Organizations
QuTech and Kavli Institute of Nanoscience, Delft University of TechnologyDATA
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