Data underlying the publication: Vibrational modes as the origin of dielectric loss at 0.27

Data underlying the publication: Vibrational modes as the origin of dielectric loss at 0.27–100 THz in a-SiC:H

doi:10.4121/523d71a0-34ce-4969-a899-00668b9f3265.v1

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doi: 10.4121/523d71a0-34ce-4969-a899-00668b9f3265

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Buijtendorp, Bruno (2024): Data underlying the publication: Vibrational modes as the origin of dielectric loss at 0.27–100 THz in a-SiC:H. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/523d71a0-34ce-4969-a899-00668b9f3265.v1

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amorphous, dielectric, hydrogenated, loss, mm-submm, silicon carbide, superconducting, vibrational modes

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by Bruno Buijtendorp

Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (∼1–10 GHz) the cryogenic and low-power dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (∼0.1–1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27–100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz.

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