Data underlying the publication: Hydrogenated Amorphous Silicon Carbide: A Low-Loss Deposited Dielectric for Microwave to Submillimeter-Wave Superconducting Circuits
doi: 10.4121/32a6e927-7e75-4cc9-a8f4-df360c3ef2ab
CC0
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measured the sub-kelvin and low-power microwave and mm-submm wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using a superconducting chip with NbTiN/a-SiC:H/NbTiN microstrip resonators. We deposited the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400°C. The a-SiC:H has a mm-submm loss tangent ranging from 0.80±0.01×10^−4 to 1.43±0.04×10&−4 in the range of 270 to 385 GHz. The microwave loss tangent is 3.2±0.2×10^−5. These are the lowest low-power sub-kelvin loss tangents that have been reported for microstrip resonators at mm-submm and microwave frequencies. We observe that the loss tangent increases with frequency. The a-SiC:H films are free of blisters and have low stress: −20 MPa compressive at 200 nm thickness to 60 MPa tensile at 1000 nm thickness.
- 2024-10-25 first online, published, posted
DATA - under embargo
The files in this dataset are under embargo until 2025-03-25.
Reason
To prevent the data becoming public before publication of PhD thesis
