Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

doi: 10.4121/19359560.v1
The doi above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
doi: 10.4121/19359560
Datacite citation style:
Luka Bavdaz; H. G. J. Eenink; J. van Staveren; Lodari, Mario; C. G. Almudever et. al. (2022): Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/19359560.v1
Other citation styles (APA, Harvard, MLA, Vancouver, Chicago, IEEE) available at Datacite
Dataset
Data used in the figures of paper: "A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature". Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.
history
  • 2022-07-22 first online, published, posted
publisher
4TU.ResearchData
format
.txt
organizations
QuTech and Kavli Institute of Nanoscience, Delft University of Technology

DATA

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