cff-version: 1.2.0
abstract: "Data used in the figures of paper: "A quantum dot crossbar with sublinear scaling
of interconnects at cryogenic temperature". Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines."
authors:
  - family-names: Bavdaz
    given-names: Luka
  - family-names: Eenink
    given-names: H. G. J.
  - family-names: van Staveren
    given-names: J.
  - family-names: Lodari
    given-names: Mario
    orcid: "https://orcid.org/0000-0003-0493-4129"
  - family-names: Almudever
    given-names: C. G.
  - family-names: Clarke
    given-names: J. S.
  - family-names: Sebastiano
    given-names: F.
  - family-names: Veldhorst
    given-names: Menno
  - family-names: Scappucci
    given-names: Giordano
    orcid: "https://orcid.org/0000-0003-2512-0079"
title: "Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature"
keywords:
version: 1
identifiers:
  - type: doi
    value: 10.4121/19359560.v1
license: CC0
date-released: 2022-07-22