Data underlying the publication: Vibrational modes as the origin of dielectric loss at 0.27–100 THz in a-SiC:H
DOI: 10.4121/523d71a0-34ce-4969-a899-00668b9f3265
Dataset
Licence CC0
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (∼1–10 GHz) the cryogenic and low-power dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (∼0.1–1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27–100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz.
History
- 2024-10-25 first online, published, posted
Publisher
4TU.ResearchDataFormat
Ellipsometry data: .dat and .SE (for CompleteEASE); FTIR data: .csv and .spa; Raman data: .txt ; SEM data: .tif and .png; mm-submm loss data: .npyAssociated peer-reviewed publication
Vibrational modes as the origin of dielectric loss at 0.27–100 THz in a-SiC:HOrganizations
TU Delft, Faculty of Electrical Engineering, Mathematics and Computer Science, Department of MicroelectronicsDATA - under embargo
The files in this dataset are under embargo until 2025-03-25.
Reason
To prevent the data becoming public before publication of PhD thesis
