Data underlying the publication: A high-mobility hole bilayer in a germanium double quantum well
DOI:10.4121/17209091.v1
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DOI: 10.4121/17209091
DOI: 10.4121/17209091
Datacite citation style:
Tosato, Alberto; Beatrice Ferrari; Amir Sammak; Alexander Hamilton; Veldhorst, Menno et. al. (2022): Data underlying the publication: A high-mobility hole bilayer in a germanium double quantum well. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/17209091.v1
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Dataset
The repository contains one dataset of experimental data (resistance as a function of gate voltage and magnetic field) for a tunnel coupled bilayer in Ge/SiGe heterostructure. The repository also contains one dataset with Schrodinger-Poisson simulations of the measured device. All data analysis and plots presented in the paper are included in 3 Jupyter notebooks.
History
- 2022-03-16 first online, published, posted
Publisher
4TU.ResearchDataFormat
Jupyter Notebook; .ipynb, Phyton Notebook;, .pyReferences
Organizations
Delft University of Technology, QuTechDATA
Files (1)
- 10,820,578 bytesMD5:
358a27745f37492cd224ce5a58430f85
Published data and notebooks.zip