Data underlying the publication: Third-order nonlinear Hall effect in Altermagnets RuO₂

DOI:10.4121/f09453b7-5328-4fea-bbfd-3273749d3a40.v1
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DOI: 10.4121/f09453b7-5328-4fea-bbfd-3273749d3a40

Datacite citation style

Chu, Ruiyue; Han, Lei; Gong, Zhenhao; Fu, Xizhi; Bai, Hua et. al. (2025): Data underlying the publication: Third-order nonlinear Hall effect in Altermagnets RuO₂. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/f09453b7-5328-4fea-bbfd-3273749d3a40.v1
Other citation styles (APA, Harvard, MLA, Vancouver, Chicago, IEEE) available at Datacite

Dataset

This dataset supports the study of the third-order nonlinear Hall effect in the altermagnetic RuO₂. High-quality RuO₂ thin films were epitaxially grown on TiO₂ substrates. Nonlinear transport measurements were performed using a low-frequency lock-in technique (166 Hz) with an AC current. The data include first and third harmonic voltage–current traces when the current is applied along different crystal orientations , and the angle dependent third-harmonic voltage-current curves in RuO₂(001). This dataset provides reproducible evidence of the symmetry-dependent nonlinear Hall response characteristic of altermagnetic RuO₂.

History

  • 2025-10-20 first online, published, posted

Publisher

4TU.ResearchData

Format

spreadsheet/.xlsx README.txt

Associated peer-reviewed publication

Third-order nonlinear Hall effect in altermagnet RuO₂

Organizations

Tsinghua University, School of Materials Science and Engineering, Key Laboratory of Advanced Materials (MOE)

DATA

Files (2)