Supporting information to derive the figures of the paper: "Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap"
doi:10.4121/19181597.v1
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doi: 10.4121/19181597
doi: 10.4121/19181597
Datacite citation style:
Davide Degli Esposti (2022): Supporting information to derive the figures of the paper: "Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap". Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/19181597.v1
Other citation styles (APA, Harvard, MLA, Vancouver, Chicago, IEEE) available at Datacite
Dataset
The data sets provide the necessary information to derive the figures of the paper "Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap" Preprint at https://arxiv.org/abs/2202.08090
history
- 2022-04-13 first online, published, posted
publisher
4TU.ResearchData
format
jpg, tif, txt, py
references
funding
- QLSI grant EU H2020 agreement No. 951852
- Army Research Office (Grant No. W911NF-17-1-0274)
- OTP with project number 16278
organizations
QuTech and Kavli Institute of Nanoscience, Delft University of Technology
DATA
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- 5,134 bytesMD5:
e729b06c0a8585b81c9ec3eff318be95
README.txt - 7,485,292 bytesMD5:
d13d9d9faaf94cf77b4b40013c6d3c6a
DataRepository.zip -
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