The doi above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
doi: 10.4121/19445ed8-c8d5-4204-a8c6-adaa7a55ece3

van Nijen, David A.; Procel, Paul; van Swaaij, René A.C.M.M.; Zeman, Miro; Isabella, Olindo et. al. (2024): Data underlying the publication: The nature of silicon PN junction impedance at high frequency. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/19445ed8-c8d5-4204-a8c6-adaa7a55ece3.v1

Dataset

• Electrical and Electronic Engineering
• Renewable Energy
• Engineering
• Energy

admittance, capacitance, impedance, low-high junction, photovoltatronics, PN junction

CC BY 4.0

RefWorks, BibTeX, Reference Manager, Endnote, DataCite, NLM, DC, CFF

by David A. van Nijen , Paul Procel , René A.C.M.M. van Swaaij , Miro Zeman , Olindo Isabella , Patrizio Manganiello

This package contains data and code associated with the publication "The nature of silicon PN junction impedance at high frequency".

The package contains:

1. All TCAD-generated admittance data related to the publication (.xlsx). This folder contains subfolders, each corresponding to one of the results section of the publication.
2. One MATLAB file (.m) used to analyze the admittance data from folder 1 using both the (1) CNLS method and (2) the analytic method.

• 2024-12-19 first online, published, posted

4TU.ResearchData

*.xlsx, *.m

The nature of silicon PN junction impedance at high frequency

TU Delft, Faculty of Electrical Engineering, Mathematics and Computer Science, Department of Electrical Sustainable Energy, Photovoltaic Materials and Devices