%% Supplementary Figure 4a
Vtg: TG gate voltage in mV.
Isd: Source-drain current in A.
dU: Lock-in voltage in V.

Device resistance can be obtained by dividing dU by the excitation current dI = 1 nA.


%% Supplementary Figure 4b
B: Out-of plane magnetic field in arbitrary units.
Isd: Source-drain current in A.
dU: Lock-in voltage in V.

Device resistance can be obtained by dividing dU by the excitation current dI = 1 nA.