%% Figure 2c
Vtg: TG gate voltage in mV
Vp: P gate voltage in mV (inset)
dI_vtg: Lock-in current in A, as function of Vtg.
dI_vp: Lock-in current in A, as function of Vp (inset).

Device conductance can be obtained by dividing dI by the excitation voltage dU= 1E-4 V.


%% Figure 2d/2e
Vp: P gate voltage in mV
Vbs: BS gate voltage in mV
Vbd: BD gate voltage in mV
dI: Lock-in current in A.

Device conductance can be obtained by dividing dI by the excitation voltage dU= 1E-4 V.