Title:
Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
Data description:
fig2_a: Turn-on and pinch-off curves for the accumulation gate and barrier gates of a crossbar unit cell, along with the determined threshold voltages.
fig2_b: Bias spectroscopy of a crossbar unit cell showing Coulomb diamonds.
fig2_c: All measured accumulation gate turn-on voltages of the crossbar, along with the geometric specification of each unit cell
fig2_d: All measured barrier gate pinch-off voltages of the crossbar, along with the geometric specification of each unit cell
fig3_a: Threshold voltages as a function of the accumulation gate width, including a linear fit through the pinch-off voltages
fig3_b: Histogram showing the detrended pinch-off voltage probability density of the left and right barriers, including a gaussian fit.
fig3_c: Histogram showing the detrended pinch-off voltage probability density of the difference between left and right barriers within each unit cell, including a gaussian fit.
fig3_d: Pinch-off values of both barriers for each unit cell, along with principal component vectors
Method description:
The data was collected through measuring electronic signals from a chip with a crossbar design in a 1.7K cryostat.
Voltage thresholds were automatically extracted from curves using Python based on voltage thesholds as explained in the paper, as in fig_2_a.
Linear and Gaussian fits were performed with the SciPy Python library.
PCA was performed using the Scikit-learn Python library.
The linear trend determined in fig3_a_pinch_off_fit was subtracted from the data in fig3b-d.
Full names of column headings and their units:
fig2_a_AG: accumulation gate voltage (V), source-drain current (A)
fig2_a_BGL: left barrier gate voltage (V), source-drain current (A)
fig2_a_BGR: right barrier gate voltage (V), source-drain current (A)
fig2_a_thresholds: gate label (-), theshold voltage (V)
fig2_b_coulomb_diamonds: accumulation gate voltage (V), source-drain bias voltage (V), source-drain current (A)
fig2_c_turn-on_map: barrier gate distance (nm), accumulation gate width (nm), accumulation gate turn-on voltage(V)
fig2_d_pinch-off_map: barrier gate distance (nm), accumulation gate width (nm), left barrier gate pinch-off voltage (V), right barrier gate pinch-off voltage (V)
fig3_a_pinch_off_fit: accumulation gate width (nm), linear fit of pinch-off voltage (V)
fig3_a_thresholds_vs_AG_width: accumulation gate width (nm), accumulation gate turn-on voltage (V), left barrier gate pinch-off voltage (V), right barrier gate pinch-off voltage (V), standard deviation of accumulation gate turn-on voltage (V), standard deviation of left barrier gate pinch-off voltage (V), standard deviation of right barrier gate pinch-off voltage (V),
fig3_b_pinch_off_histogram: pinch-off voltage bin edge (V), left barrier pinch-off voltage probability density (1/V), right barrier pinch-off voltage probability density (1/V)
fig3_b_pinch_off_histogram_fit_left: left barrier pinch-off voltage (V), Gaussian fit of left barrier pinch-off voltage probability density (1/V)
fig3_b_pinch_off_histogram_fit_right: right barrier pinch-off voltage (V), Gaussian fit of right barrier pinch-off voltage probability density (1/V)
fig3_c_pinch_off_difference_histogram: pinch-off voltage difference between left and right barriers bin edge (V), pinch-off voltage difference between left and right barriers probability density (1/V)
fig3_c_pinch_off_difference_histogram_fit: pinch-off voltage difference between left and right barriers (V), Gaussian fit of pinch-off voltage difference between left and right barriers probability density (1/V)
fig3_d_pca_visualization: left barrier pinch-off voltage (V), right barrier pinch-off voltage (V), principal component vector with 3 standard deviations length along left barrier pinch-off voltage axis (V), principal component vector with 3 standard deviations length along right barrier pinch-off voltage axis (V)
fig3_d_pinch-off_vs_pinch-off: left barrier pinch-off voltage (V), right barrier pinch-off voltage (V)
Missing data recorded as: nan