TY - DATA T1 - Data underlying the publication: Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators PY - 2024/10/25 AU - Bruno Buijtendorp UR - DO - 10.4121/ff8e2171-87d6-4bf4-a5cb-7930cf45b366.v1 KW - silicon KW - amorphous KW - a-Si:H KW - hydrogenated KW - FTIR KW - Raman KW - ellipsometry KW - microwave KW - dielectric KW - loss N2 - <p>Superconducting circuit elements used in millimeter-submillimeter (mm-submm) astronomy would greatly benefit from deposited dielectrics with small dielectric loss and noise. This will enable the use of multilayer circuit elements and thereby increase the efficiency of mm-submm filters and allow for a miniaturization of microwave kinetic inductance detectors (MKIDs). Amorphous dielectrics introduce excess loss and noise compared with their crystalline counterparts, due to two-level system defects of unknown microscopic origin. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C, and 350°C. The measured void volume fraction, hydro- gen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10−5 for a resonator energy of 105 photons, at 120 mK and 4 to 7 GHz. This makes these films promising for MKIDs and on-chip mm-submm filters.</p> ER -