TY - DATA T1 - VBi2Te4 dataset underlying the publication: Phase Separation Prevents the Synthesis of VBi2Te4 by Molecular Beam Epitaxy PY - 2024/01/10 AU - Marieke Altena UR - DO - 10.4121/95ee6f7b-3cf7-4c01-a461-860e6f9485bf.v1 KW - molecular beam epitaxy KW - VBi2Te4 KW - magnetic topological insulator KW - phase separation KW - crystal growth N2 -

This dataset contains the collection of experimental data on attempts to deposit VBi2Te4 by molecular beam epitaxy (MBE). The data is published in:

Altena M., Jansen T., Tsvetanova M., Brinkman A. Nanomaterials 2023


The published data covers samples deposited with different vanadium fluxes during the MBE growth, deposited with the following settings:

General:

Substrate: (0001)-Al2O3

Temp_sub = 150C

φBi = 0.0027 Å/s

φTe = 0.072 Å/s

Thickness buffer layer Bi2Te3: 1 nm


TJ_VBT01 - φV = 1800 C (temperature of the Knudsen cell)

TJ_VBT02 - φV = 1750 C

TJ_VBT03 - φV = 1850 C

TJ_VBT04 - φV = 1900 C

MA_VBT14 - φV = 1800 C, no buffer layer


The dataset is a .zip file covering the following data:

- XRD data (TJ_VBT01, TJ_VBT02, TJ_VBT03, TJ_VBT04)

- STEM + EDX data (MA_VBT14)

- RHEED data (TJ_VBT02)

- AFM data (TJ_VBT01, TJ_VBT02, TJ_VBT03, TJ_VBT04)


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