@misc{https://doi.org/10.4121/uuid:68e75799-0378-4130-9764-b80cb1f2319b,
  doi = {10.4121/uuid:68e75799-0378-4130-9764-b80cb1f2319b},
  url = {https://data.4tu.nl/articles/dataset/Supporting_raw_data_files_as_presented_in_the_paper_Direct_Band_Gap_Emission_from_Hexagonal_Ge_and_SiGe_Alloys/12702629/1},
  author = {Haverkort, Jos and Fadaly, E.M.T.(Elham) and Dijkstra, A. (Alain) and Suckert, J.R. (Jens) and Ziss, D. (Dorian) and van Tilburg, M. (Marvin) and Mao, C. (Chenyang) and Ren, Y. (Yizhen) and van Lange, V.T. (Victor) and Korzun, K. (Ksenia)},
  keywords = {Direct band gap, Epitaxy, Hexagonal Ge, Hexagonal Si, Light emission, Materials Science, Nanowires, Semiconductor, Si-compatible},
  title = {Supporting raw data files as presented in the paper: Direct Band Gap Emission from Hexagonal Ge and SiGe Alloys},
  publisher = {4TU.Centre for Research Data},
  year = {2020},
  copyright = {CC0},
}