Data underlying the publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

Posted on 01.08.2022 - 10:19 authored by Luka Bavdaz
Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.

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Bavdaz, Luka (2022): Data underlying the publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature. 4TU.ResearchData. Collection. https://doi.org/10.4121/c.5868563.v1
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FUNDING

OTP project number 16278

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4TU.ResearchData

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