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SiLAS-Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes

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posted on 30.01.2019 by P. (Philipp) Staudinger, H. (Heinz) Schmid, S. (Svenja) Mauthe, K.E. (Kirsten) Moselund
Recent research on nanowires (NWs) demonstrated the ability of III–V semiconductors to adopt a different crystallographic phase when they are grown as nanostructures, giving rise to a novel class of materials with unique properties. Controlling the crystal structure however remains difficult and the geometrical constraints of NWs cause integration challenges for advanced devices. Here, we report for the first time on the phase-controlled growth of micron-sized planar InP films by selecting confined growth planes during template-assisted selective epitaxy. We demonstrate this by varying the orientation of predefined templates, which results in concurrent formation of zinc-blende (ZB) and wurtzite (WZ) material exhibiting phase purities of 100% and 97%, respectively. Optical characterization revealed a 70 meV higher band gap and a 2.5× lower lifetime for WZ InP in comparison to its natural ZB phase. Further, a model for the transition of the crystal structure is presented based on the observed growth facets and the bonding configuration of InP surfaces.

Funding

ERC Starting Grant project PLASMIC, 678567

EU, 735008

Swiss National Science Foundation, 200021_156746

History

Contributors

Eindhoven University of Technology, Faculty of Applied Physics; IBM Research, Zürich

Publisher

4TU.Centre for Research Data

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