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Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

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posted on 22.07.2022, 12:27 authored by Luka BavdazLuka Bavdaz, H. G. J. Eenink, J. van Staveren, Mario LodariMario Lodari, C. G. Almudever, J. S. Clarke, F. Sebastiano, Menno VeldhorstMenno Veldhorst, Giordano ScappucciGiordano Scappucci
Data used in the figures of paper: "A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature". Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.

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4TU.ResearchData

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QuTech and Kavli Institute of Nanoscience, Delft University of Technology

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